Method of fabricating a high Q factor integrated circuit...

Details Method of fabricating a high Q factor integrated circuit... Method of fabricating a high Q factor integrated circuit...

2009-11-05

2010-11-09

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

C438S650000, C438S652000, C257S531000, C257SE21022, C336S229000

Reexamination Certificate

active

07829427

ABSTRACT:
A method of forming an inductor. The method including: (a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in the dielectric layer; after (b), (c) forming a resist layer on a top surface of the dielectric layer; after (c), (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and after (d), (e) completely filling the lower trench and at least partially filling the upper trench with a conductor in order to form the inductor.

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