Method of fabricating a high Q factor integrated circuit...

Details Method of fabricating a high Q factor integrated circuit... Method of fabricating a high Q factor integrated circuit...

2005-12-28

2009-12-29

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

C438S650000, C438S652000, C257S531000, C257SE21022, C336S229000

Reexamination Certificate

active

07638406

ABSTRACT:
A method of forming an inductor. The method includes: forming a dielectric layer on a substrate; forming a lower trench in the dielectric layer; forming a liner in the lower trench and on the dielectric layer; forming a Cu seed layer over the liner; forming a resist layer on the Cu seed layer; forming an upper trench in the resist layer; electroplating Cu to completely fill the lower trench and at least partially fill the upper trench; removing the resist layer; selectively forming a passivation layer on all exposed Cu surfaces; selectively removing the Cu seed layer from regions of the liner; and removing the thus exposed regions of the liner from the dielectric layer, wherein a top surface of the inductor extends above a top surface of the dielectric layer, the passivation layer remaining on regions of sidewalls of the inductor above the top surface of the dielectric layer.

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