Method of fabricating a high electrical frequency infrared detec

Details Method of fabricating a high electrical frequency infrared detec Method of fabricating a high electrical frequency infrared detec

1978-06-22

1979-06-12

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136 89SJ, 148188, 250211J, 250212, 250330, 250338, 250370, 357 15, 357 30, H01L 21363, H01L 2714

Patent

active

041579267

ABSTRACT:
A thin-film single-crystal infrared detector exhibiting an increased frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.

REFERENCES:
patent: 3146138 (1964-08-01), Shirland
patent: 3433677 (1969-03-01), Robinson
patent: 3454847 (1969-07-01), Zuleeg et al.
patent: 3502517 (1970-03-01), Sussmann
patent: 3515957 (1970-06-01), Kitagawa
patent: 3614661 (1971-10-01), Borner et al.
patent: 3616527 (1971-11-01), Janning
patent: 3716424 (1973-02-01), Schoolar
patent: 3904879 (1975-09-01), Amingual et al.
patent: 3961998 (1976-06-01), Scharnhorst et al.
Kitamura; S., "Influences of Heat-treatment . . . Cadmium Sulphide . . . J. hysical Soc. of Japan, vol. 16, No. 12, Dec. 1961, pp. 2430-2439.
Nill et al., "Laser . . . Metal Semiconductor . . . PbSnTe", Applied Physics Letters, vol. 16, No. 10, 15 May 1970, pp. 375-377.
Jensen et al., "Surface Charge . . . PbSnSe . . . Films", J. Vac. Sci. Tech., vol. 13, No. 4, Jul./Aug. 1976, pp. 920-925.

Affiliated with

Also associated with

Rating

Method of fabricating a high electrical frequency infrared detec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a high electrical frequency infrared detec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a high electrical frequency infrared detec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1108513