Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-09-03
1987-03-24
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29576C, 148 15, 148DIG55, 365104, H01L 2120
Patent
active
046514090
ABSTRACT:
A fuse programmable ROM includes a wafer for a CMOS-type structure having an emitter, which emitter is overlain by a fuse pad of an undoped polysilicon and a conductive layer. There is a layer of barrier oxide disposed on the conductive top layer of the fuse pad and a sidewall oxide surrounding the periphery of the fuse pad both of which are overlain by the metallic electrical connection.
The process of producing the fuse programmable ROM includes wide utilization of standard CMOS fabrication techniques with which are included the steps of depositing fuse material of undoped polysilicon, forming the fuse material into a fuse pad, and then making an electrical connection with the fuse pad.
REFERENCES:
patent: 3570114 (1971-03-01), Bean et al.
patent: 3717852 (1973-02-01), Abbas et al.
patent: 3980505 (1976-09-01), Buckley
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4287569 (1981-09-01), Fukushima
patent: 4403399 (1983-09-01), Taylor
patent: 4412378 (1983-11-01), Shinada
patent: 4420766 (1983-12-01), Kasten
patent: 4424578 (1984-01-01), Miyamoto
patent: 4441167 (1984-04-01), Principi
patent: 4488262 (1984-12-01), Basire et al.
patent: 4489481 (1984-12-01), Jones
patent: 4569122 (1986-02-01), Chan
patent: 4590589 (1986-05-01), Gerzberg
Tanimoto et al, "A Novel MOSPROM Using a Highly Resistive Poly-Si Resistor", IEEE Transactions on Electron Devices, vol. ED 27, No. 2, Mar. 1980.
Colclaser, Micro-Electronics Processing and Device Design, John Wiley & Sons, 1980, New York, pp. 84-100.
"Fijitsu Comes Out with Fastest 64K PROM", Electronic Engineering Times, Monday, Dec. 6, 1982, p. 10.
Ellsworth Daniel L.
Sullivan Paul A.
Callahan John T.
Cavender J. T.
NCR Corporation
Roy Upendra
Salys Casimer K.
LandOfFree
Method of fabricating a high density, low power, merged vertical does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a high density, low power, merged vertical, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a high density, low power, merged vertical will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1345678