Metal working – Method of mechanical manufacture – Electrical device making
Patent
1989-06-15
1990-02-13
Arbes, Carl J.
Metal working
Method of mechanical manufacture
Electrical device making
29830, 174255, 361414, 428901, H05K 302
Patent
active
048994391
ABSTRACT:
A high density electrical interconnect having a plurality of metallic conductors supported from metallic pillars which are electrically isolated from the ground plane by openings. The interconnect can be fabricated using a temporary support dielectric, which may be removed after completion to provide an air dielectric or be replaced with a more suitable permanent dielectric. The removal of the temporary support allows the conductors to be coated with protective layers or with a layer of a higher conductivity.
REFERENCES:
patent: 3405227 (1968-10-01), Hazlett
patent: 3526541 (1970-09-01), Peltzer
patent: 3528048 (1970-09-01), Kirk
patent: 3606677 (1971-09-01), Ryan
patent: 3634602 (1972-01-01), Vonn Bruck
patent: 3646670 (1972-03-01), Maeda et al.
patent: 4026011 (1977-05-01), Walton
patent: 4250616 (1981-02-01), Klimek et al.
patent: 4268956 (1981-05-01), Parks et al.
patent: 4438560 (1984-03-01), Kisters
patent: 4438561 (1984-03-01), Mueller
patent: 4480288 (1984-10-01), Gazdik et al.
patent: 4598166 (1986-07-01), Neese
patent: 4667404 (1987-05-01), Reisman et al.
patent: 4783722 (1988-11-01), Osaki et al.
patent: 4803450 (1989-02-01), Burgess et al.
patent: 4821007 (1989-04-01), Fields et al.
Kroger Harry
Potter Curtis N.
Smith Lawrence N.
Arbes Carl J.
Microelectronics and Computer Technology Corporation
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