Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-02-28
2008-12-23
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S094000, C438S099000, C438S312000, C438S594000, C438S597000, C438S781000, C257SE21116
Reexamination Certificate
active
07468287
ABSTRACT:
Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.
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Kugler Thomas
Li Shunpu
Newsome Christopher
Russell David
Estrada Michelle
Jefferson Quovaunda
Oliff & Berridg,e PLC
Seiko Epson Corporation
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