Method of fabricating a fully self-aligned TFT-LCD

Details Method of fabricating a fully self-aligned TFT-LCD Method of fabricating a fully self-aligned TFT-LCD

1998-08-03

1999-11-02

Wilczewski, Mary

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, 257 59, 257 72, H01L 21336, H01L 2184

Patent

active

059769025

ABSTRACT:
An ITO layer and a first metal layer is patterned on a glass substrate. A first silicon nitride layer, a silicon layer and a second silicon nitride layer are formed on the substrate. A back-side exposure is introduced using the gate electrodes as a mask. The second silicon nitride layer that is not covered by a positive photoresist is etched. A heavily doped silicon layer is formed over the substrate. A negative photoresist is formed over the heavily doped silicon layer. Then, a further back-side exposure is employed. The heavily doped silicon layer over the etched second silicon nitride layer is removed. Via holes are created to expose a portion of the first metal layer. A second metal layer and a third metal layer are respectively formed. Next, a thermal annealing is performed for forming silicide. Subsequently, a third metal layer and the second metal layer are patterned. Then, the island pattern is defined. Subsequently, a passivation layer formed of silicon nitride layer is deposited on the island pattern.

REFERENCES:
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5166086 (1992-11-01), Takeda et al.
patent: 5441905 (1995-08-01), Wu
patent: 5580796 (1996-12-01), Takizawa et al.

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