Method of fabricating a flip chip semiconductor device having an

Fishing – trapping – and vermin destroying

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437 54, 437189, 437209, H01L 2170

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055411355

ABSTRACT:
Flip chip bumps (24, 26, and 27) and an inductor (17) are simultaneously fabricated on a semiconductor substrate (10). The fabrication process includes two electroplating steps. The first step electroplates copper (18) onto a seed layer (13) to form the inductor (17) and a first portion (16) of the flip chip bumps (24, 26, and 27). The second step electroplates copper (21) onto the previously electroplated copper (18) to form a second portion (21) of the flip chip bumps (24, 26, and 27).

REFERENCES:
patent: 3691628 (1972-09-01), Kim et al.
patent: 4034399 (1977-07-01), Drukier et al.
patent: 5087896 (1992-02-01), Wen et al.
patent: 5177670 (1993-01-01), Shinohara et al.
patent: 5189507 (1993-02-01), Carlomagno et al.
patent: 5200364 (1993-04-01), Loh
patent: 5276351 (1994-01-01), Yamazaki et al.
patent: 5397729 (1995-03-01), Kayanuma et al.
patent: 5410179 (1995-04-01), Kornrumpf et al.
patent: 5420063 (1995-05-01), Maghsoudnia et al.
patent: 5488007 (1996-01-01), Kim et al.
Chong H. Ahn, et al., IEEE Transactions on Components, Packaging, and Manufacturing Technology-Part A, vol. 17. No. 3, "A Fully Integrated Planar Toroidal Inductor with a Micromachined Nickel-Iron Magnetic Bar", p. 466 Sep. 1994.

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