Method of fabricating a field-effect transistor over gate electr

Details Method of fabricating a field-effect transistor over gate electr Method of fabricating a field-effect transistor over gate electr

1994-01-05

1995-03-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437 86, 437912, 437913, 148DIG12, 148DIG150, H01L 21265

Patent

active

054016657

ABSTRACT:
A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.

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E. Yablonovitch et al., "Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates," Applied Physics Letters, 1990, vol. 56, pp. 2419-2421.
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Journal of Applied Physics, vol. 46, No. 7, Jul. 1975, "Ferroelectric Field-effect memory device using Bi.sub.4 Ti.sub.3 O.sub.12 film", by Sugibuchi et al, pp. 2877-2882.

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