Method of fabricating a ferroelectric capacitor having a...

Details Method of fabricating a ferroelectric capacitor having a... Method of fabricating a ferroelectric capacitor having a...

2006-12-26

2006-12-26

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S396000

Reexamination Certificate

active

07153704

ABSTRACT:
A method of fabricating a ferroelectric capacitor that can inhibit ferroelectric characteristics from deteriorating includes forming a lower electrode film over from on a top surface of a plug disposed in a silicon oxide film to on the silicon oxide film; forming a paraelectric film so as to frame-likely cover a periphery of a surface of the lower electrode film with a predetermined width; forming a ferroelectric film over from on the exposed lower electrode film from an opening of the paraelectric film to on the paraelectric film in the surroundings of the exposed lower electrode film; forming an upper electrode film, in a surface of the ferroelectric film, over from on a region that faces a contact surface between the lower electrode film and the ferroelectric film to on a region that faces the paraelectric film; and etching through a mask that covers, in a surface of the upper electrode film, from a region that faces the contact surface to a region that faces the paraelectric film.

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patent: 6699726 (2004-03-01), Hidaka et al.
patent: 5-63203 (1993-03-01), None

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