Method of fabricating a double polysilicon bipolar transistor wh

Details Method of fabricating a double polysilicon bipolar transistor wh Method of fabricating a double polysilicon bipolar transistor wh

1990-02-12

1991-08-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, H01L 21265

Patent

active

050377680

ABSTRACT:
An improved bipolar transistor of a BiCMOS integrated circuit is fabricated by utilizing a nitride layer combined with two polysilicon layers to form a self-aligned P-type extrinsic base which results in lower base resistance and lower base-collector capacitance, and thus improved performance.

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