Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-06-15
1977-09-13
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148171, 148187, 313500, 331 945H, 357 16, 357 17, 357 18, 357 20, H01L 21205, H01L 2122, H01L 3300
Patent
active
RE0293954
ABSTRACT:
A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.
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Panish et al., "Double-Heterostructure Injection Lasers . . . " Applied Physics Letters, vol. 16, No. 8, Apr. 15, 1970, pp. 326-327.
Ripper et al., "Stripe-Geometry . . . Above Room Temperature" Applied Physics Letters, vol. 18, No. 4, Feb. 15, 1971, pp. 155-157.
Nippon Electric Company Limited
Rutledge L. Dewayne
Saba W. G.
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