Method of fabricating a double heterostructure injection laser u

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148171, 148187, 313500, 331 945H, 357 16, 357 17, 357 18, 357 20, H01L 21205, H01L 2122, H01L 3300

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RE0293954

ABSTRACT:
A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.

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patent: 3691476 (1972-09-01), Hayashi
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patent: 3780358 (1973-12-01), Thompson
patent: 3783351 (1974-01-01), Tsukada et al.
Panish et al., "Double-Heterostructure Injection Lasers . . . " Applied Physics Letters, vol. 16, No. 8, Apr. 15, 1970, pp. 326-327.
Ripper et al., "Stripe-Geometry . . . Above Room Temperature" Applied Physics Letters, vol. 18, No. 4, Feb. 15, 1971, pp. 155-157.

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