Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-04-14
1981-08-04
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29590, 148175, 148187, 357 15, 357 44, 357 45, 357 76, 427 84, H01L 2176, H01L 2710, H01L 2956
Patent
active
042814480
ABSTRACT:
Method of fabricating monolithic integrated circuit structure incorporating a full-wave diode bridge rectifier of four Schottky diodes. A body of silicon is produced by growing an epitaxial layer of N-type silicon on a P-type substrate. P-type imparting material is diffused into the layer to form isolating barriers delineating first and second N-type zones separated from each other by intervening P-type material and third and fourth N-type zones which are contiguous. A mixture of titanium and tungsten is deposited on portions of the zones and heated to form a mixed silicide. Schottky rectifying barriers are produced at the interfaces of the mixed silicide and N-type zones. Conductive members are formed; a first conductive member is connected to the N-type material of the first zone and the silicide of the third zone, a second conductive member is connected to the N-type material of the second zone and the silicide of the fourth zone, a third conductive member is connected in common to the silicide of the first and second zones, and a fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth conductive members.
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Noyce et al., "Schottky Diodes Make IC Scene," Electronics, Jul. 21, 1969, pp. 74-80.
Barry Vincent J.
McCarthy Jeremiah P.
GTE Laboratories Incorporated
Keay David M.
Rutledge L. Dewayne
Saba W. G.
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