Coherent light generators – Particular resonant cavity – Distributed feedback
Patent
1996-03-07
1997-11-04
Davie, James W.
Coherent light generators
Particular resonant cavity
Distributed feedback
372 45, 372 46, 437129, H01S 319, H01L 2120
Patent
active
056848234
ABSTRACT:
A quantum wire structure includes a substrate of a first semiconductor having a surface and a first band gap energy; a layer of a second semiconductor having a second band gap energy and including second semiconductor elements disposed on the surface of the substrate spaced apart in a pattern at an interval of no more than 100 nm, each second semiconductor element having a trapezoidal cross-section transverse to the surface of the substrate and including an upper surface generally parallel to the surface of the semiconductor substrate and sloped surfaces oriented so that a third semiconductor does not grow on the sloped surfaces; a layer of a third semiconductor having a third band gap energy smaller than the first and second band gap energies disposed on the upper surfaces of the second semiconductor elements and on the surface of the substrate between adjacent second semiconductor elements but not on the sloped surfaces; and a layer of a fourth semiconductor having a fourth band gap energy larger than the third band gap energy disposed on and burying the layers of the second and third semiconductors.
REFERENCES:
patent: 4797374 (1989-01-01), Scott et al.
patent: 5020072 (1991-05-01), Abe et al.
patent: 5212712 (1993-05-01), Makuta
patent: 5258326 (1993-11-01), Morishima et al.
patent: 5274660 (1993-12-01), Abe
patent: 5296719 (1994-03-01), Hirai et al.
Karam et al, "Patterning And Overgrowth Of Nanostructure Quantum Well Wire Arrays By LP-MOVPE", 5th International Conference on Metallorganic Vapor Phase Epitaxy, pp. 1-15, Jun. 1990.
Nishida et al, "Selective Area Growth Of InGaAs/InP By Chemical Beam Epitaxy And Its Growth Mechanism", 11th Record of Alloy Semiconductor Physics/Electronics Symposium, May 1992, pp. 347-354.
"A Quantum Wire Structure Laser Employing OMVRE", pp. 49-52, No.
Asada et al, "Gain And The Threshold Of Three-Dimensional Quantum-Box Lasers", IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, 1986, pp. 1915-1921.
Kapon et al, "Single Quantum Wire Semiconductor Lasers", Applied Physics Letters, vol. 55, No. 26, Dec. 1989, pp. 2715-2717.
Galeuchet et al, "Fabrication Of Buried GaInAs/InP Quantum Wires By One-Step MOVPE Growth", Science and Engineering of One-and Zero-Dimensional Semiconductors, 1990, pp. 1-9.
Goto Katsuhiko
Mihashi Yutaka
Davie James W.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Method of fabricating a diffraction grating and a distributed fe does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a diffraction grating and a distributed fe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a diffraction grating and a distributed fe will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1839269