Semiconductor device manufacturing: process – Having biomaterial component or integrated with living organism
Reexamination Certificate
2011-04-19
2011-04-19
Mai, Anh D (Department: 2814)
Semiconductor device manufacturing: process
Having biomaterial component or integrated with living organism
C438S049000, C257S409000
Reexamination Certificate
active
07927887
ABSTRACT:
The present invention relates to a Field-Effect Transistor (FET) and, more particularly, to a Dielectric-Modulated Field-Effect Transistor (DMFET) and a method of fabricating the same. A DMFET according to an embodiment of the present invention comprises a substrate in which a source and a drain are formed, wherein the source and the drain are spaced apart from each other, a gate formed on a region between the source and the drain, of the substrate, wherein at least part of the gate is spaced apart from the substrate, biomolecules formed below a region spaced apart from the substrate, of the gate, and a linker for combining the gate and the biomolecules.
REFERENCES:
patent: 4411741 (1983-10-01), Janata
patent: 5576563 (1996-11-01), Chung
patent: 5693545 (1997-12-01), Chung et al.
patent: 7309621 (2007-12-01), Conley et al.
patent: 2005/0053524 (2005-03-01), Keersmaecker et al.
patent: 2005/0260423 (2005-11-01), Natesan
patent: 2006/0154400 (2006-07-01), Choi et al.
patent: 2007/0141763 (2007-06-01), Choi et al.
patent: 2008/0193705 (2008-08-01), Kim et al.
patent: 2008/0193965 (2008-08-01), Zeng et al.
patent: 10-2006-0086235 (2006-07-01), None
Choi Yang-Kyu
Gu Bonsang
Im Hyungsoon
Korea Advanced Institute of Science and Technology
Mai Anh D
The Belles Group P.C.
LandOfFree
Method of fabricating a dielectric-modulated field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a dielectric-modulated field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a dielectric-modulated field effect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2636623