Method of fabricating a dielectric-modulated field effect...

Semiconductor device manufacturing: process – Having biomaterial component or integrated with living organism

Reexamination Certificate

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C438S049000, C257S409000

Reexamination Certificate

active

07927887

ABSTRACT:
The present invention relates to a Field-Effect Transistor (FET) and, more particularly, to a Dielectric-Modulated Field-Effect Transistor (DMFET) and a method of fabricating the same. A DMFET according to an embodiment of the present invention comprises a substrate in which a source and a drain are formed, wherein the source and the drain are spaced apart from each other, a gate formed on a region between the source and the drain, of the substrate, wherein at least part of the gate is spaced apart from the substrate, biomolecules formed below a region spaced apart from the substrate, of the gate, and a linker for combining the gate and the biomolecules.

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patent: 10-2006-0086235 (2006-07-01), None

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