Method of fabricating a dielectric isolated area

Details Method of fabricating a dielectric isolated area Method of fabricating a dielectric isolated area

1990-12-28

1992-02-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 86, 437974, 148DIG12, H01L 2176

Patent

active

050913301

ABSTRACT:
A dielectric isolated area is formed by bonding a first and a second wafer. A first wafer having a first and a second major surface is provided. A second wafer having a first and a second major surface is then provided. Trenches are formed in the first surface of the second wafer. Subsequently, a dielectric layer which can be planarized is formed on the surface of the second wafer having trenches formed therein. The first and second wafers are then bonded so that the dielectric layer and the first surface of the first wafer are bonded to each other. A portion of the second surface of the second wafer is then removed down to at least the bottom of each trench.

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