Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-09-18
2007-09-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
C438S099000, C438S479000, C438S608000, C438S694000, C257SE21038, C257SE21257
Reexamination Certificate
active
11102711
ABSTRACT:
Provided is a method forming a desired pattern of electronically functional material3on a substrate1. The method comprises the steps of: creating a first layer of patterning material2on the substrate whilst leaving areas of the substrate exposed to define said desired pattern; printing a suspension comprising particles of the electronically functional material3in a liquid dispersant, to which the patterning material is impervious, on the patterning material and the exposed substrate; removing at least some of the liquid dispersant from the suspension to consolidate the particles; and applying a first solvent to said consolidated particles which is capable of solubilizing the patterning material2and to which the consolidated particles are pervious so that the patterning material is removed from the substrate1together with any overlying electronically functional material3.
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Kugler Thomas
Li Shunpu
Newsome Christopher
Russell David
Lebentritt Michael
Lee Kyoung
Oliff & Berridg,e PLC
Seiko Epson Corporation
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