Method of fabricating a current controlled bistable electrical o

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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357 1, 357 2, 427 87, 427 82, H01L 2928

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045076723

ABSTRACT:
A current-controlled, bistable threshold or memory switch comprises a polycrystalline metal-organic semiconductor sandwiched between metallic electrodes. Films of either copper or silver complexed with TNAP, DDQ, TCNE, TCNQ, derivative TCNQ molecules, or other such electron acceptors provides switching between high and low impedance states with combined delay and switching times on the order of 1 nanosecond. Switching behavior of a complex of the present invention is related to the reduction potential of the acceptor molecule.
Various other modifications, adaptations and alterations are of course possible in light of the above teachings. Therefore, it should be understood at this time that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.

REFERENCES:
patent: 4206308 (1980-06-01), Murakami
patent: 4371883 (1983-02-01), Potember
Zellers et al., "Organo Copper Thin-Film Structures Exhibiting Threshold Switching with Short Term Memory, Journal of Non-Crystalline Solids, 46, No. 3, pp. 361-369, Dec. 1981.
Melby, Journal of American Chemistry, vol. 84, pp. 3374-3387, 1962.

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