Method of fabricating a contact

Details Method of fabricating a contact Method of fabricating a contact

2005-11-15

2005-11-15

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

63, 63

Reexamination Certificate

active

06964879

ABSTRACT:
A method for fabricating a contact is provided. First, a substrate is provided. A patterned first material layer is formed over the substrate. The first material layer is fabricated using a conductive material. Thereafter, a treatment operation is performed to transform a portion of the first material layer into a second material layer with insulating properties. The second material layer is located on sidewall sections and a top section of the first material layer. A dielectric layer is formed over the second material layer and the substrate. A portion of the dielectric layer and the second material layer are removed to expose the first material layer. Because a treatment transformation is used to reduce the dimension of contacts, this invention eliminates the limitations associated with forming a contact through an etching process.

REFERENCES:
patent: 5015604 (1991-05-01), Lim et al.
patent: 5432128 (1995-07-01), Tsu
patent: 6251763 (2001-06-01), Inumiya et al.
patent: 6642581 (2003-11-01), Matsuda et al.
patent: 2003/0129818 (2003-07-01), Inai et al.

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