Method of fabricating a compound semiconductor device

Details Method of fabricating a compound semiconductor device Method of fabricating a compound semiconductor device

1997-04-11

1999-03-23

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 94, 438172, 438175, H01L 2100, H01L 21338

Patent

active

058858474

ABSTRACT:
The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate. The method comprises the steps of sequentially forming a plurality of first epitaxial layers for manufacturing the first compound semiconductor device on the semiconductor substrate; forming a first insulating film pattern for defining an active region of the first compound semiconductor device; etching the plurality of first epitaxial layers using the first insulating film pattern as a mask; forming a second insulating film on the resultant structure; forming a sidewall insulating spacer on the sidewall of the active region of the first compound semiconductor device by dry etching the second insulating film; sequentially forming a plurality of second epitaxial layers for manufacturing the second compound semiconductor device on the portion from which the plurality of first epitaxial layers is etched back; forming each electrode of the first and second compound semiconductor devices; and forming an interconnection electrode interconnecting each electrode of the first and second compound semiconductor devices.

REFERENCES:
patent: 5170228 (1992-12-01), Sasaki
patent: 5576222 (1996-11-01), Arai et al.
Streit et al., "GaAa and InP Selective Molecular-Beam Epitaxy," J. Vac. Sci. Technol. B 13(2), pp. 771-773, Mar. 1995.
Hurm, V., et al. 1.3 .mu.m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and A1GaAs/GaAs HEMTs grown on GaAs, IEDM, pp. 935-937, 1994.
Zebda, Y., et al. Monolithically integrated InP-Based front-end photoreceivers, IEEE, vol. 38, No. 6, Jun. 1991, pp. 1324-1332.

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