Method of fabricating a compositionally modulated electrode...

Details Method of fabricating a compositionally modulated electrode... Method of fabricating a compositionally modulated electrode...

2007-03-06

2007-03-06

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S128000, C438S130000, C438S658000, C438S660000

Reexamination Certificate

active

10769107

ABSTRACT:
A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a higher resistivity than the electrode. As a result, a current flowing through the electrode generates joule heating in the high resistivity region and that joule heating increases a temperature of the data layer and reduces a coercivity of the data layer. Consequently, a magnitude of a switching field required to rotate an alterable orientation of magnetization of the data layer is reduced. The high resistivity region can be fabricated using a plasma oxidation, a plasma nitridation, a plasma carburization, or an alloying process.

REFERENCES:
patent: 6657826 (2003-12-01), Shimazawa et al.
patent: 6818458 (2004-11-01), Gill
patent: 6887717 (2005-05-01), Hiramoto et al.
patent: 6993827 (2006-02-01), Horng et al.
patent: 7001777 (2006-02-01), Adelerhof et al.

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