Method of fabricating a compositional semiconductor device

Details Method of fabricating a compositional semiconductor device Method of fabricating a compositional semiconductor device

1994-10-26

1998-02-03

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257627, 257628, H01L 2120, H01L 2904

Patent

active

057147655

ABSTRACT:
A method of fabricating a compositional semiconductor device comprising a antum well wire or quantum dot superlattice structure, in particular a device selected from the group comprising lasers, photodiodes, resonant tunneling transistors, resonant tunneling diodes, far infrared detectors, far infrared emitters, high electron mobility transistors, solar cells, optical modulators, optically bistable devices and bipolar transistors, by epitaxial growth of the superlattice structure on a semiconductor substrate, is characterised in that the epitaxial growth is effected on a {311}, {211}, {111} or {110} substrate, and that the devices preferably have length and width dimensions less than 500 .ANG. and especially less than 300 .ANG..

REFERENCES:
patent: 4872046 (1989-10-01), Morkoc et al.
patent: 4941024 (1990-07-01), Hayakawa et al.
patent: 4974036 (1990-11-01), Kapon
patent: 5065200 (1991-11-01), Bhat et al.
patent: 5070387 (1991-12-01), Van Gorkum
IBM Technical Disclosure 29,2229 (1986).
Wang et al: J.Appl.Phys 60,1834 (1986).

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