Method of fabricating a composite silicon-on-insulator substrate

Details Method of fabricating a composite silicon-on-insulator substrate Method of fabricating a composite silicon-on-insulator substrate

1996-09-23

1999-02-09

Dang, Trung

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438406, 438459, 438975, 438977, 148DIG102, H01L 2130

Patent

active

058693866

ABSTRACT:
Disclosed herein is a composite SOI substrate which allows, by use of a conventional visible light aligner, high-precision alignment of insulator film patterns buried in an SOI substrate and patterns which are to be formed on the SOI layer located above it. The composite SOI substrate is fabricated by forming alignment oxide film patterns I a on the periphery of a main surface of a first silicon substrate 10 which also has buried oxide film patterns formed thereon; preparing a second silicon substrate having preferably V-shaped notch sections 9 on its periphery to expose the alignment patterns provided on the first silicon substrate; bonding the second silicon substrate to the main surface side of the first silicon substrate 10 while exposing the alignment oxide film patterns 1a; and then thinning the second silicon substrate to form an SOI layer 20a. In order to expose the alignment patterns, the second silicon substrate may either have a width smaller than the first silicon substrate by having a pair of orientation flats corresponding to the alignment patterns, or the substrates may be circular with the diameter of the second silicon substrate being smaller than the first silicon substrate. The alignment patterns may also be exposed by thinning the peripheral portion of the first silicon substrate from the back side surface after bonding has been done.

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