Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2005-06-28
2005-06-28
Eley, Timothy V. (Department: 3724)
Metal working
Method of mechanical manufacture
Electrical device making
C029S830000, C029S832000, C029S842000, C029S418000
Reexamination Certificate
active
06910261
ABSTRACT:
A method of fabricating a colossal magneto-resistive detector using a thin film transfer method includes the use of a perovskite oxide material as a substrate, and a rock salt structure material as a buffer layer, template layer, and release layer. Advantages associated with the method include not only the ability to produce a detector of the requisite film quality, but one which satisfies the temperature coefficient of resistance and fabrication temperature constraints. In addition, when employed as either the substrate or the buffer layer, template layer, and release layer, after bonding the rock salt structure material can be easily removed using water, and the excess rock salt structure material/water solution can then be removed with known techniques.
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A. Goyal, et al. Material Characteristics of Perovskite Manganese Oxide Thin Films for Biometric Applications, Applied Physics Letters 71, Oct. 27, 1997, pp. 2535-2537.
Z. Trajanovic, et al. “Growth of Colossal Magnetoresistance Thin Films on Silicon,” Applied Physics Letters 69, Aug. 12, 1998, pp. 1005-1007.
Tidrow Meimei Z.
Tidrow Steven
Adams William V.
Eley Timothy V.
The United States of America as represented by the Secretary of
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