Method of fabricating a cold cathode for field emission

Details Method of fabricating a cold cathode for field emission Method of fabricating a cold cathode for field emission

1997-02-07

1999-07-20

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

H01J 902

Patent

active

059249030

ABSTRACT:
A method is for use in fabricating a cold cathode comprising a sharp emitter (3) having a sharp tip that is formed on a silicon substrate 1b. The method comprises a first step of forming an intermediate emitter on the silicon substrate. The intermediate emitter has first and second emitter regions (33,34). The second emitter region is positioned under the first emitter region and has a width (diameter) larger than that of the first emitter region. The method further comprises a second step of processing the intermediate emitter into the sharp emitter by oxidation.

REFERENCES:
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patent: 5201992 (1993-04-01), Marcus et al.
patent: 5775968 (1998-07-01), Toyoda et al.
K. Koga et al., "New Structure Si Filed Emitter Arrays with Lower Operation Voltage".
Patent Abstracts of Japan, Abstract of JP-A 3 095 829.
Patent Abstracts of Japan, Abstract of JP-A 5 094 762.
Koga et al, "New Structure Si Filed Emitter Arrays with Low Operation Voltage", International Electron Device Meeting (IEDM), 1994, pp. 23-26.

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