Method of fabricating a CMOS semiconductor devices

Details Method of fabricating a CMOS semiconductor devices Method of fabricating a CMOS semiconductor devices

1992-06-19

1993-12-28

Quach, T. N.

Fishing, trapping, and vermin destroying

437 44, 437 57, 148DIG15, H01L 21336, H01L 21266

Patent

active

052739147

ABSTRACT:
An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode. The invention includes forming a first protective film on the gate of an NMOS, implanting to form LDD region for the NMOS, implanting to form source and drain regions of a PMOS, forming a second protective film on the gate of the NMOS, implanting to form source and drain regions of the NMOS, the first and second protective films prevent the gate electrode of the NMOS from being exposed to ion implantation during the respective implanting steps so that channeling is prevented from occurring in the gate electrode of the NMOS.

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