Method of fabricating a CMOS semiconductor device

Details Method of fabricating a CMOS semiconductor device Method of fabricating a CMOS semiconductor device

1989-10-06

1991-07-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 57, H01L 21336

Patent

active

050305824

ABSTRACT:
An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode.

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