Method of fabricating a charge coupled device

Details Method of fabricating a charge coupled device Method of fabricating a charge coupled device

1987-02-17

1988-05-03

Ozaki, George T.

Fishing, trapping, and vermin destroying

357 24, 437 50, 437 53, H01L 21425

Patent

active

047420278

ABSTRACT:
A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.

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