Method of fabricating a capacitor with a textured polysilicon in

Details Method of fabricating a capacitor with a textured polysilicon in Method of fabricating a capacitor with a textured polysilicon in

1994-05-09

1995-07-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, 437 27, 437 24, 148DIG14, H01L 21265

Patent

active

054299721

ABSTRACT:
An enhanced capacitor configuration is provided in which the conductive and insulative layers are formed by implantation rather than deposition. The conductive regions are implanted at dissimilar depths and the insulative region is implanted between the conductive regions to form the conductive plates and intermediate dielectric material. By implanting rather than depositing, the dielectric material remains free of pinholes and can be configured thinner than conventional dielectrics, with a higher dielectric constant (k) due to the absence of an oxide. Moreover, cross-diffusions which occur during the anneal step allow texturization of the dielectric/conductive juncture. Texturization corresponds to an increase in surface area of the capacitor and, similar to increase in dielectric constant and decrease in dielectric thickness, increases the capacitive value of the ensuing capacitor.

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