Method of fabricating a capacitor of a semiconductor device

Details Method of fabricating a capacitor of a semiconductor device Method of fabricating a capacitor of a semiconductor device

1997-12-16

1999-08-10

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438254, H01L 2120

Patent

active

059373067

ABSTRACT:
A method of fabricating a capacitor of a semiconductor device is disclosed including the steps of forming a first polysilicon layer and an insulating layer on a semiconductor substrate, implanting ions into the insulating layer to form an ion-implanted layer, patterning the insulating layer including the ion-implanted layer, etching the insulating layer pattern, forming a second polysilicon layer on the insulating layer, removing the insulating layer and the ion-implanted layer, and forming a dielectric layer and a third polysilicon layer on the first and second polysilicon layers.

REFERENCES:
patent: 5639689 (1997-06-01), Woo
patent: 5789267 (1998-08-01), Hsia et al.

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