Method of fabricating a capacitor for a semiconductor device

Details Method of fabricating a capacitor for a semiconductor device Method of fabricating a capacitor for a semiconductor device

2007-12-11

2007-12-11

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C257S532000, C257SE27048, C438S396000

Reexamination Certificate

active

11367325

ABSTRACT:
A capacitor for a semiconductor device includes a first inter metal dielectric layer is disposed on a substrate. A first electrode is disposed on the first inter metal dielectric layer. A second electrode partially overlaps the first electrode. A first dielectric layer is disposed between the first and second electrodes. A third electrode partially overlaps the second electrode. A second dielectric layer is disposed between the second and third electrodes. An etch stop layer is disposed on the first, second, and third electrodes. A second inter metal dielectric layer is formed on the etch stop layer and includes first, second, and third via holes exposing the first and third electrodes and the etch stop layer. First, second, and third plugs are disposed in the first, second, and third via holes.

REFERENCES:
patent: 6902981 (2005-06-01), Ng et al.
patent: 6933191 (2005-08-01), Biery et al.
patent: 2002/0056869 (2002-05-01), Morimoto
patent: 2004/0248359 (2004-12-01), Hieda
patent: 2005/0082592 (2005-04-01), Chang et al.
patent: 2001-0093673 (2001-10-01), None
patent: 2002-0037295 (2002-05-01), None

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