Method of fabricating a buried structure SRAM cell

Details Method of fabricating a buried structure SRAM cell Method of fabricating a buried structure SRAM cell

1994-10-04

1997-02-11

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 47, 437 60, 437203, H01L 2170, H01L 2700

Patent

active

056020490

ABSTRACT:
An improved SRAM cell having ultra-high density and methods for fabrication are described. Each SRAM cell, according to the present invention, has its own buried structure, including word lines (i.e., gate regions) and bit lines (i.e., source/drain regions), thus increasing the cell ratio of channel width of cell transistor to that of pass transistor to keep the data stored in the cell transistor more stable without increasing the area per cell. In addition, according to the present invention, the field isolation between active regions is not field oxide but blankly ion-implanted silicon substrate. Therefore, SRAM cells can be densely integrated due to the absence of bird's beak encroachment. Since the present invention has more planar topography, it is easily adapted to the VLSI process, which is always restricted by the limit of resolution of photolithography, thus increasing the degree of integration.

REFERENCES:
patent: 4721987 (1988-01-01), Baglee et al.
patent: 4763180 (1988-08-01), Hwang et al.
patent: 5034341 (1991-07-01), Itoh
patent: 5330927 (1994-07-01), Lee

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