Method of fabricating a bipolar transistor with high...

Details Method of fabricating a bipolar transistor with high... Method of fabricating a bipolar transistor with high...

2002-12-27

2008-11-25

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Making plural bipolar transistors of differing electrical...

C438S202000, C438S205000, C438S309000, C438S234000, C438S370000

Reexamination Certificate

active

07456070

ABSTRACT:
A method of fabricating a transistor that includes a doped buried region within a semiconductor body. The doped buried region includes a portion having a first thickness and a second thickness, the first thickness being less than the second thickness. In one embodiment, the first thickness is about half the second thickness. The transistor also includes a collector region over the buried region, a base region within the collector region and an emitter region within the base region.

REFERENCES:
patent: 4644383 (1987-02-01), Akcasu
patent: 5014106 (1991-05-01), Maeda et al.
patent: 2-312243 (1990-12-01), None
patent: WO 97/17726 (1997-05-01), None

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