Method of fabricating a bipolar transistor having a link base

Details Method of fabricating a bipolar transistor having a link base Method of fabricating a bipolar transistor having a link base

1994-07-12

1996-01-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 33, 437164, H01L 21265, H01L 21225, H01L 21385

Patent

active

054808162

ABSTRACT:
On an epitaxial layer (4) serving as a collector layer are formed an emitter layer (10), an intrinsic base layer (9) surrounding the emitter layer (10) while permitting the surface of the emitter layer (10) to be exposed, external base layers (8) and link base layers (7) lying between the intrinsic base layer (9) and external base layers (8). The intrinsic base layer between the emitter layer and the epitaxial layer serving as the collector layer has a relatively high impurity concentration, so that a collector-emitter breakdown voltage is not decreased. The link base layers between the intrinsic base layer and external base layers has a relatively low impurity concentration to suppress decrease in emitter-base junction breakdown voltage.

REFERENCES:
patent: 4252582 (1981-02-01), Anantha et al.
patent: 4839305 (1989-06-01), Brighton
patent: 4988632 (1991-01-01), Pfiester
patent: 5023192 (1991-06-01), Josquin et al.
patent: 5032532 (1991-07-01), Mori et al.
patent: 5037768 (1991-08-01), Cosentino
patent: 5162245 (1992-11-01), Favreau
patent: 5235206 (1993-08-01), Desilets et al.
patent: 5254485 (1993-10-01), Sagawa et al.
patent: 5302535 (1994-04-01), Imai et al.
patent: 5342797 (1994-08-01), Sapp et al.

Affiliated with

Also associated with

Rating

Method of fabricating a bipolar transistor having a link base does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a bipolar transistor having a link base, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a bipolar transistor having a link base will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-234744