Method of fabricating a bipolar junction transistor

Details Method of fabricating a bipolar junction transistor Method of fabricating a bipolar junction transistor

2005-09-27

2005-09-27

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S353000

Reexamination Certificate

active

06949438

ABSTRACT:
A substrate with a plurality of isolation structures for defining at least an active area thereon is provided. Ions of a first conductive type are implanted into the substrate to form a doping region in the active area. Following that, a protective layer is formed on the substrate, the protective layer having an opening to expose the doping region. A first doping layer of a second conductive type and a second doping layer of the first conductive type are formed on the doping region, respectively, to complete fabrication of a bipolar junction transistor.

REFERENCES:
patent: 6492711 (2002-12-01), Takagi et al.
patent: 6627972 (2003-09-01), Ehwald et al.
patent: 6673703 (2004-01-01), Menut et al.
patent: 6706583 (2004-03-01), Comard
patent: 6777302 (2004-08-01), Chen et al.
patent: 6815304 (2004-11-01), Sankin et al.

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