Method of fabricating a bipolar integrated structure

Details Method of fabricating a bipolar integrated structure Method of fabricating a bipolar integrated structure

1996-11-13

1999-05-18

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

438355, 438360, 438423, 438234, H01L21/331

Patent

active

059045353

ABSTRACT:
A process for fabricating a bipolar transistor on a silicon-on-insulator substrate which includes etching a bipolar transistor area into the substrate, wherein the bipolar transistor area has substantially vertical sidewalls and a bottom, and forming a buried collector in bottom of the bipolar transistor area. Polysilicon sidewalls are formed adjacent to the vertical sidewalls in the bipolar transistor area, wherein the polysilicon sidewalls are connected to the buried collector. The polysilicon sidewalls are oxidized to form a layer of oxidized polysilicon. Oxide sidewalls are formed on the oxidized polysilicon sidewalls, and epitaxial silicon is formed to fill the bipolar transistor area. A base and an emitter are formed for the bipolar transistor, within the epitaxial barrier.

REFERENCES:
patent: 4700461 (1987-10-01), Choi et al.
patent: 4839309 (1989-07-01), Easter et al.
patent: 4965872 (1990-10-01), Vasudev
patent: 5028557 (1991-07-01), Tsai et al.
patent: 5049513 (1991-09-01), Eklund
patent: 5057580 (1991-10-01), Fock et al.
patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5073506 (1991-12-01), Maszara et al.
patent: 5075241 (1991-12-01), Spratt et al.
patent: 5100810 (1992-03-01), Yoshimi et al.
patent: 5102809 (1992-04-01), Eklund et al.
patent: 5140390 (1992-08-01), Li et al.
patent: 5162882 (1992-11-01), Pollack
patent: 5212397 (1993-05-01), See et al.
patent: 5236863 (1993-08-01), Iranmanesh
patent: 5250461 (1993-10-01), Sparks
patent: 5273915 (1993-12-01), Hwang et al.
patent: 5289027 (1994-02-01), Terrill et al.
patent: 5308785 (1994-05-01), Comfort et al.
patent: 5422299 (1995-06-01), Newdeck et al.
patent: 5434092 (1995-07-01), Neudeck et al.

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