Method of fabricating a BCCD channel with stair-case doping by s

Details Method of fabricating a BCCD channel with stair-case doping by s Method of fabricating a BCCD channel with stair-case doping by s

1990-07-16

1991-06-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 53, H01L 21263

Patent

active

050249630

ABSTRACT:
This invention relates to a method of forming a charge coupled device (CCD) channel which has a trench-type multi-potential profile. To form the multi-potential profile, ion implantation is performed several times with a self-alignment mask using a polysilicon layer. This method simplifies the fabrication process and prevents charges from diffusing over the entire CCD channel laterally when the amount of charge is small. This results in charge confinement in a trench in the middle of the channel, enhancing self-induced field and fringing field. Consequently, charge transfer efficiency is improved for small amount of charge.

REFERENCES:
patent: 4362575 (1982-12-01), Wallace
patent: 4396438 (1983-08-01), Goodman
patent: 4642877 (1987-02-01), Garner et al.
patent: 4728622 (1988-03-01), Kamata

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