Method of exposure employing phase shift mask of attenuation typ

Photocopying – Projection printing and copying cameras – Step and repeat

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355 71, 355 77, G03B 2742, G03B 2732, G03B 2772

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active

056443811

ABSTRACT:
By the method of exposure using attenuation type phase shift mask, based on the phase angle of exposure light passing through second and third light transmitting portions and on hole diameters of the second and third light transmitting portions, an optimal value between first and second distances h.sub.1 and h.sub.2 can be calculated. Therefore, a resist film can be exposed at optimal focal position. As a result, even when there is a step in the material to be exposed, a desired pattern can be exposed with high precision through the same steps in every region of the material to be exposed.

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patent: 4355892 (1982-10-01), Mayer et al.
patent: 5328784 (1994-07-01), Fukuda
patent: 5393623 (1995-02-01), Kamon
patent: 5411824 (1995-05-01), Vasudev et al.
patent: 5428478 (1995-06-01), Hanyu et al.
"Imaging Characteristics Of Multi-Phase-Shifting And Halftone Phase-Shifting Masks", Terasawa et al., JJAP Series 5, pp. 3-9.
"Systematic Design Of Phase-Shifting Masks With Extended Depth Of Focus And/Or Shifted Focus Plane", Liu et al., SPIE vol. 1674, pp. 14-16, 18-52.

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