Method of exposure and attenuated type phase shift mask

Details Method of exposure and attenuated type phase shift mask Method of exposure and attenuated type phase shift mask

2006-04-05

2009-08-25

Rosasco, S. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07579122

ABSTRACT:
A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase modulation area allowing a part of said light to pass through. The phase modulation amount of the amplitude and phase modulation area relative to the reference area of the attenuated type phase shift mask is {360°×n+(182° to 203°)} (n is an integer).

REFERENCES:
patent: 5916712 (1999-06-01), Miyashita et al.
patent: 6852455 (2005-02-01), Lyons et al.
patent: 2004/0166422 (2004-08-01), Yamazoe et al.
patent: 1174613 (1998-02-01), None
patent: 1182504 (2001-08-01), None
patent: WO97/15866 (1997-01-01), None
Office action (Jul. 4, 2008) in connection with Chinese Pat. Appl. No. 2006100732081, which corresponds with U.S. Appl. No. 11/399,288.
Machine translation of References BB (and BC).
English translation of the relevant portions of the Jul. 4, 2008 Office action (Reference BD) in connection with Chinese Pat. Appl. No. 2006100732081, which corresponds with U.S. Appl. No. 11/399,288.
I. Tanabe, Y. Takehana and M. Hoga, “On art of Photo Mask” issued Oct. 20, 1997, by Kabushiki Kaisha Kogyo Chosakai (pp. 229-232).

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