Method of evaluating thermal treatment and method of...

Details Method of evaluating thermal treatment and method of... Method of evaluating thermal treatment and method of...

2011-02-22

2011-02-22

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

With measuring or testing

C257SE21001

Reexamination Certificate

active

07892862

ABSTRACT:
Provided are the methods of evaluating thermal treatment. In the methods, a wafer comprising a silicon substrate having an oxygen concentration of approximately equal to or less than 1.0×1018atoms/cm3and a silicon epitaxial layer on at least one surface of the substrate is employed.

REFERENCES:
patent: 4420722 (1983-12-01), Todd
patent: 5350489 (1994-09-01), Muraoka
patent: 5374396 (1994-12-01), Blackford et al.
patent: 5458735 (1995-10-01), Richter et al.
patent: 5705423 (1998-01-01), Sakata et al.
patent: 6348261 (2002-02-01), Murakami
patent: 2002/0151252 (2002-10-01), Kawase et al.
patent: 10-223713 (1998-08-01), None
English language Abstract of JP 10-223713.

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