Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1998-04-08
2000-06-13
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
H01L 2978, H01L 3300
Patent
active
060752637
ABSTRACT:
A method of evaluating the surface/interface of a semiconductor device is disclosed. This method uses the semiconductor device in which an n-type source electrode and an n-type drain electrode are formed on both ends of the surface of an n-type conductive layer formed on a semiconductor substrate; and a gate electrode composed of a p-type ohmic electrode or an n-type Schottky electrode is formed on one end of the surface on which the source or drain electrode is not disposed. In this semiconductor device, voltage to be applied to the gate electrode is changed and a change of current flowing between the source electrode and the drain electrode in response to the voltage change is measured. Then the type of trap on the surface/interface of the semiconductor is determined from an amount of change in the value of the current.
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patent: 4939557 (1990-07-01), Pao et al.
"An analytical model for frequency-dependent drain conductance in HJFET's" Kunihiro et al Inst. Phys. Conf. Ser. No. 136; Chapter 2; 1993; pp. 3-8.
Ohno Yasuo
Takahashi Yuji
Meier Stephen D.
NEC Corporation
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