Static information storage and retrieval – Floating gate – Particular connection
Patent
1995-05-31
1997-02-18
Yoo, Do Hyun
Static information storage and retrieval
Floating gate
Particular connection
365182, 36518533, 36518907, 365201, G11C 2900
Patent
active
056046995
ABSTRACT:
A method employing a test structure identical to the memory array whose gate oxide or interpoly dielectric quality is to be determined, except for the fact that the cells are connected electrically parallel to one another. The test structure is subjected to electrical stress of such a value and polarity as to extract electrons from the floating gate of the defective-gate-oxide or defective-interpoly-dielectric cells and so modify the characteristic of the cell while leaving the charge of the non-defective cells unchanged. In this way, only the threshold of the defective cells is altered. A subthreshold voltage is then applied to the test structure, and the drain current through the cells, which is related to the presence of at least one defective cell in the structure, is measured. Measurement and analysis of the current-voltage characteristic provides for determining the number of defective cells. The method is suitable for in-line quality control of the gate oxide or interpoly dielectric of EPROM, EEPROM and flash-EEPROM memories.
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Cappelletti Paolo G.
Ravazzi Leonardo
Driscoll David M.
Morris James H.
SGS--Thomson Microelectronics S.r.l.
Yoo Do Hyun
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