Method of evaluating reticle pattern overlay registration

Details Method of evaluating reticle pattern overlay registration Method of evaluating reticle pattern overlay registration

2006-01-17

2006-01-17

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S013000

Reexamination Certificate

active

06987053

ABSTRACT:
A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.

REFERENCES:
patent: 2004/0054981 (2004-03-01), Okagawa et al.

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