Method of evaluating lifetime of semiconductor material and appa

Details Method of evaluating lifetime of semiconductor material and appa Method of evaluating lifetime of semiconductor material and appa

1993-06-16

1995-09-19

Wieder, Kenneth

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324766, 324765, G01R 3126

Patent

active

054518865

ABSTRACT:
A method of and apparatus for evaluating the lifetime of a semiconductor material which is capable of measuring, in a non-contact and non-destructive manner, the lifetime of a surface thin-layer portion so as to evaluate the quality of a semiconductor device formed of an epitaxial wafer or a thin device-forming material. Light within a short-wavelength region is radiated for a short period of time on the surface of a semiconductor material to be evaluated, thereby generating carriers effectively on the surface and in a surface thin-layer. An electromagnetic wave within a millimeter to sub-millimeter wave region is projected onto the surface, and a wave reflected from the surface is measured to obtain a decay curve of the carriers. On the basis of the carrier decay curve, the lifetime of the surface as well as a surface thin-layer portion of the semiconductor material is evaluated.

REFERENCES:
patent: 4704576 (1987-11-01), Tributsch
patent: 4949034 (1990-08-01), Imura
patent: 5047713 (1991-09-01), Kirino
patent: 5138255 (1992-08-01), Kusama
Bueche, Frederick "Intro To Physics For Scientists and Engineers" p. 563 1975.

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