Fishing – trapping – and vermin destroying
Patent
1996-04-10
1997-10-14
Niebling, John
Fishing, trapping, and vermin destroying
437172, H01L 2166, H01L 21306, H01L 21479, G01R 3126
Patent
active
056772041
ABSTRACT:
A semiconductor device (100) including a silicon substrate (1), a gate oxide film (2) formed on the silicon substrate (1) and having a defect (3) and a dielectric breakdown voltage failure portion (4), and a polysilicon film (5) formed on the gate oxide film (2) is immersed in a chemical etchant (7) in a wet etching apparatus (9). With the silicon substrate (1) serving as an anode, a DC voltage source (6) of the wet etching apparatus (9) applies voltage to the silicon substrate (1) to perform anode oxidation. Passivation layers (10) are formed on parts of the surface of the polysilicon film (5) which overlies the defect (3) and dielectric breakdown voltage failure portion (4) but are not formed on the surface of the polysilicon film (5) in regions insulated by the gate oxide film (2). The polysilicon film (5) in the regions on which the passivation layers (10) are not formed is removed by the chemical etchant (7).
REFERENCES:
patent: 4729970 (1988-03-01), Nath et al.
patent: 5141603 (1992-08-01), Dickey et al.
patent: 5172207 (1992-12-01), Nojiri et al.
Patent Abstracts of Japan, Section E, Section No. 416, vol. 10, No. 186, p. 124 Jun. 28, 1986.
Imai Yukari
Katayama Toshiharu
Otani Naoko
Dutton Brian K.
Mitsubishi Denki & Kabushiki Kaisha
Niebling John
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