X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Patent
1995-09-06
1997-01-28
Wong, Don
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
378 71, G01N 23207
Patent
active
055984525
ABSTRACT:
According to the invention, it is sought to provide a method of evaluating single crystal of silicon, which permits determination of the amount of precipitated oxygen of even a sample having been heat treated and with unknown initial interstitial oxygen concentration. X-rays radiated from X-ray source 7 is converted by slit 6 into a thin, parallel incident X-ray beam 3 to be incident on sample single crystal 1. After adjusting the angle .theta.1 of sample with respect to the incident X-ray beam such as to satisfy Bragg conditions, diffracted X-rays 4 produced by diffraction on the sample single crystal 1 are coupled from the back side thereof through X-ray receiving slit 8 to scintillator 5 for intensity measurement. The amount of precipitated oxygen is calculated from the measured diffracted X-ray intensity.
REFERENCES:
patent: 5073918 (1991-12-01), Kamon
patent: 5136624 (1992-08-01), Schneider et al.
Kawado et al., "Influence of Crystal Imperfection on High-Resolution Diffraction Profiles of Silicon Single Crystals . . . ", Appl. Phys. Lett., vol. 48, No. 20, pp. 2246-2248, May 20, 1991.
Hahn et al., "Effects of Heavy Boron Doping Upon Oxygen Precipitation in Czochralski Silicon", J. Appl. Phys., vol. 64, No. 9, pp. 4454-4465, Nov. 1, 1988.
Hoshi Ryoji
Takenaka Takao
Takeno Hiroshi
Ushio Satoshi
Shin-Etsu Handotai & Co., Ltd.
Wong Don
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