Method of evaluating a semiconductor device and an apparatus for

Details Method of evaluating a semiconductor device and an apparatus for Method of evaluating a semiconductor device and an apparatus for

1989-12-26

1991-04-09

Fields, Carolyn E.

Radiant energy

Invisible radiation responsive nonelectric signalling

Luminescent device

2504581, 2504591, 358106, H05B 3300

Patent

active

050067176

ABSTRACT:
A method and apparatus for evaluating the lifetime of a semiconductor device are disclosed. Luminescence of a predetermined wavelength which is emitted from an operating semiconductor device is detected. The luminescence of the predetermined wavelength is one which correlates with the degradation of the semiconductor device. Then, the image of detected luminescence of the predetermined wavelength is processed to determine the place of the degradation caused by hot carriers.

REFERENCES:
patent: 4680635 (1987-07-01), Knurana
patent: 4755874 (1988-07-01), Esrig et al.
N. Khurane, et al., Analysis of Product Hot Electron Problems by Gated Emission Microscopy, IEEE/IRPS 189 (1986).
Takada et al., "An Empirical Model for Device Degradation due to Hot Courier Injection", IEEE Electron Device Letters, vol. EDL/4, No. 4, pp. 111-113, Apr. 1983.
Toriumi et al., "A Study of Photon Emission from N-channel MOSFET's", IEEE, Trans. on Electron Devices, vol. ED-34, No. 7, Jul. 1987.

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