Method of evaluating a density of oxygen-precipitation defects i

Details Method of evaluating a density of oxygen-precipitation defects i Method of evaluating a density of oxygen-precipitation defects i

1996-02-20

1998-04-21

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

G01R 3126

Patent

active

057421757

ABSTRACT:
An evaluation method to efficiently and precisely measure high-density oxygen-precipitation defects in the bulk of a silicon wafer is disclosed. A number of silicon wafers containing oxygen-precipitation defects are provided. The SPV method is utilized to measure the diffusion length of the minority carriers in the silicon wafers. The density of oxygen-precipitation defects is measured by the infrared tomography method. The diffusion length and the defect density are plotted and are found to be correlated. That is, the SPV measured diffusion length of the minority carriers and the defect density obtained by the infrared tomography method have specific relationships. A constant A can then be obtained from the plot. The diffusion length L of minority carriers in silicon wafers provided for evaluation is measured by the SPV method. Finally, the bulk oxygen-precipitation defects density can be calculated from the formula A.times.L.sup.-2. The present invention can precisely obtain the defect density in very short time. Moreover, the bulk density can be obtained since the silicon wafers need not be broken.

REFERENCES:
patent: 4342616 (1982-08-01), Elliott et al.
patent: 5066599 (1991-11-01), Kaneta et al.
patent: 5471293 (1995-11-01), Lowell et al.

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