Method of etching silicon nitride

Details Method of etching silicon nitride Method of etching silicon nitride

1998-05-08

2000-10-24

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438724, 438706, 438712, H01L 2176

Patent

active

061366633

ABSTRACT:
A method of etching a silicon nitride layer. On a semiconductor substrate having a silicon nitride layer and a photo-resist layer on the silicon nitride layer formed thereon, the silicon nitride layer is removed by anisotropic plasma etching with the photo-resist layer as a mask. A mixture of tetra-fluoro-methane, argon, and nitrogen is used as an etching reactive material.

REFERENCES:
patent: 4857140 (1989-08-01), Loewenstein
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5843846 (1998-12-01), Nguyen et al.
patent: 5933759 (1999-08-01), Nguyen et al.
patent: 5942446 (1999-08-01), Chen et al.

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