Method of etching semiconductor wafers

Details Method of etching semiconductor wafers Method of etching semiconductor wafers

1995-03-29

1997-10-14

Chu, John S.

Fishing, trapping, and vermin destroying

437901, 437921, 437927, 437947, 148135, 148159, 148170, 1566281, 1566521, 1566541, H01L 21465

Patent

active

056772483

ABSTRACT:
The electrochemical stop etching is favorably carried out by the application of any voltage without permitting current that is caused by aluminum remainder to leak and avoiding short-circuits between the low-resistance layer in the scribe region and the isolation. In a method of producing semiconductor devices relying upon the electrochemical stop etching, major circuits are constituted and ground aluminum wirings 5 are formed on at least one surface of a substrate 7, and their peripheries are surrounded by scribe regions to form a plurality of chip patterns 1. On the same surface of the substrate 7 where chip patterns 1 are formed, aluminum wirings 3 for etching are formed via a field oxide film 10 while maintaining a predetermined gap relative to the GND aluminum wirings and maintaining an equal height and surrounding the chip patterns 1 in the scribe regions. The neighboring aluminum wirings 3 for etching are electrically connected together among the chip patterns 1 that neighbor one another, and a predetermined voltage is applied to the aluminum wirings 3 for etching to effect the electrochemical stop etching.

REFERENCES:
patent: 3721593 (1973-03-01), Hays et al.
patent: 5172207 (1992-12-01), Nojiri et al.
patent: 5223444 (1993-06-01), Mosser et al.

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